New PDF release: Ferroelectric-Gate Field Effect Transistor Memories: Device

By Byung-Eun Park,Hiroshi Ishiwara,Masanori Okuyama,Shigeki Sakai,Sung-Min Yoon

ISBN-10: 9402408398

ISBN-13: 9789402408393

This publication offers finished assurance of the fabrics features, strategy applied sciences, and machine operations for reminiscence field-effect transistors applying inorganic or natural ferroelectric skinny movies. This transistor-type ferroelectric reminiscence has fascinating basic machine physics and in all likelihood huge business effect.  

Among a number of the purposes of ferroelectric skinny movies, the advance of nonvolatile ferroelectric random entry reminiscence (FeRAM) has advanced such a lot actively because the past due Eighties and has accomplished modest mass creation degrees for particular functions considering 1995. There are forms of reminiscence cells in ferroelectric nonvolatile thoughts. One is the capacitor-type FeRAM and the opposite is the field-effect transistor (FET)-type FeRAM. even if the FET-type FeRAM claims final scalability and nondestructive readout features, the capacitor-type FeRAMs were the most curiosity for the main semiconductor reminiscence businesses, as the ferroelectric FET has deadly handicaps of cross-talk for random accessibility and brief retention time.

This publication goals to supply readers with the improvement historical past, technical concerns, fabrication methodologies, and promising purposes of FET-type ferroelectric reminiscence units, offering a entire assessment of previous, current, and destiny applied sciences. the themes mentioned will result in extra advances in large-area electronics carried out on glass or plastic substrates in addition to in traditional Si electronics.

The booklet consists of chapters written by way of prime researchers in ferroelectric fabrics and comparable gadget applied sciences, together with oxide and natural ferroelectric skinny films.

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Ferroelectric-Gate Field Effect Transistor Memories: Device Physics and Applications (Topics in Applied Physics) by Byung-Eun Park,Hiroshi Ishiwara,Masanori Okuyama,Shigeki Sakai,Sung-Min Yoon


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